Early in 2010 we featured a blog post, titled: Haglund’s Deformity, Bauer Bump, or Pump Bump – Non-Surgical Treatment. Today we’ll delve deeper into the subject of friction-induced skin trauma and offer a simple solution to end heel irritation for good.
Hot spots, blisters, calluses and other forms of skin irritation are all-too-often misdiagnosed by consumers and healthcare professionals as being caused by pressure. In reality, friction (aka “rubbing”) is an equally, if not more critical component of skin trauma. If you consider the all the heat, moisture and friction that builds up as you walk, run or play sports, you’ll begin to understand the importance of combating whichever force that can most easily be controlled. While high-quality socks and footwear play a significant role in overall foot health, there remain a few areas of footwear that are prone to hot spots, blisters and those painful heel bumps. Relieving friction in the areas of footwear that cause discomfort is the basis for two products manufactured by Tamarack Habilitation Technologies.
ENGO® Blister Prevention Patches are used by sports enthusiasts, weekend warriors and high-heel wearers worldwide to prevent and relieve footwear discomfort. ENGO® patches simply adhere to the inside of footwear, opposite the area of discomfort (heel, ball of foot, toes) and provide long-lasting protection. For more information about ENGO, visit www.GoENGO.com.
ShearBan® is distributed exclusively to healthcare professionals and features the same ultra-low friction material as ENGO® (Find a ShearBan Dealer). The significant differences between ShearBan and ENGO include product packaging and an added layer of fabric that helps ShearBan conform around contours of orthopedic devices and custom foot orthotics. For more information about ShearBan, visit www.shearban.com.
ENGO® Blister Prevention Patches and ShearBan® are proven to protect feet against friction blisters, calluses and other forms of skin trauma.
If you have any questions about these products, please email us.
